Diodes DZQA5V6AXV5 - Manual (Page 2)

DZQA5V6AXV5
Document number: DS31557 Rev. 4 - 2
2 of 4
www.diodes.com
December 2012
© Diodes Incorporated
DZQA5V6AXV5
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Forward Voltage @ I
F
= 10mA V
F
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 5 & 6) P
D
380 mW
Peak Power Dissipation, 8x20 μS Waveform (Note 7) P
pk
20 W
Thermal Resistance, Junction-to-Ambient (Note 5) R θJA 327 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Breakdown Voltage
(Note 8)
Leakage Current
(Note 8)
Max. Clamping
Voltage
(Note 7)
Capacitance
@ 0V Bias (pF)
(Note 9)
Capacitance
@ 3V Bias (pF)
(Note 9)
V
BR
@ I
T
= 1mA I
RM
@ V
RM
V
C
@ I
PP
C
T
C
T
Min (V) Nom (V) Max (V) Max(
μA) (V) V C (V) I PP (A) Typ Max Typ Max
DZQA5V6AXV5 T56 5.3 5.6 5.9 1 3.0 13 1.6 18.7 20 11.4 12.3
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25% of the listed value.
7. Non-repetitive current pulse per Figure 2 and derate above T
A
= +25°C per Figure 1.
8. Short duration pulse test used to minimize self-heating effect.
9. Per element, f = 1MHZ, T
A
= +25 °C
0 25 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT
I
,
PEAK
PUL
SE C
URRENT
(
%
I
)
pp
pp
t, TIME ( s)
μ
Fig. 2 Pulse Waveform