Dup412vp5, Thermal characteristics, Electrical characteristics – Diodes DUP412VP5 User Manual
Page 2

DUP412VP5
Document number: DS31642 Rev. 8 - 2
2 of 4
January 2011
© Diodes Incorporated
DUP412VP5
Thermal Characteristics
Characteristic Symbol
Value
Unit
Peak Power Dissipation, 8x20
μS Waveform (Note 5)
P
pk
18 W
Thermal Resistance, Junction-to-Ambient (Note 5)
R
θJA
417 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Type
Number
Marking
Code
Breakdown Voltage
(Note 6)
Leakage Current
(Note 6)
Capacitance
@0V Bias(pF)
(Note 7)
Capacitance
@3V Bias(pF)
(Note 7)
V
BR
@ I
T
= 5mA
I
RM
@ V
RM
C
T
C
T
Min (V)
Nom (V)
Max (V)
Max(
μA)
(V) Typ Max Typ Max
DUP412VP5 V1
11.4
12
12.7
0.5
9.0
6.5
10
3.5
5
Notes:
4. Non-repetitive current pulse per Figure 2 and derate above T
A
= 25°C per Figure 1.
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
7. Per element, f = 1MHz, T
A
= 25
°C
0
25
50
75
100
125
150
175
200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20
40
60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P
0.0001
0.001
0.01
0.1
1
0.4
0.6
0.8
1.0
1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typical Forward Characteristics
F
I
, INS
T
AN
T
ANE
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
I,
I
N
S
T
AN
T
ANE
O
U
S
R
EV
E
R
SE
C
U
R
R
EN
T
(n
A
)
R
Fig. 4 Instantaneous Reverse Current
vs. Ambient Temperature
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 9V
R