Diodes DMG4932LSD - Manual (Page 7)

DMG4932LSD
Document number: DS32119 Rev. 4 - 2
7 of 9
www.diodes.com
August 2010
© Diodes Incorporated
DMG4932LSD
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 20 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
100,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20
Fig. 21 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E
(V
)
GS
V = 15V
I = 9A
DS
D
0 5 10 15 20 25 30
Fig. 22 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
10,000
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
100
1,000
C
iss
C
rss
C
oss
f = 1MHz
Fig. 23 Single Pulse Maximum Power Dissipation
0
1
2
3
4
5
6
7
8
9
10
0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
P
, PEAK
T
R
ANSI
ENT P
O
WE
R
(W
)
(PK)
Single Pulse
R
= 113°C/W
R
T - T = P * R (t)
θ
θ
θ
JA
JA
J A JA
R (t) = r(t) * θJA
1. DUT Mounted on 1 x MRP FR-4 Board
2. T = 150°C, P = 1.12W(DC)
J D
0.001 0.01 0.1 1 10 100 1,000
Fig. 24 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(
t),
T
R
AN
S
IE
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 113°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5