Diodes DMC2990UDJ User Manual
Page 5
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
5 of 9
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
V
, G
A
TE THR
ESHO
LD
VO
LT
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
T, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
50
40
30
20
10
0
10
15
20
5
0
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
2
4
6
8
10
12
14
16
18
20
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
E
AKA
GE
CURRENT
(
nA)
DS
S
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
Q - (nC)
Fig. 11 Gate Charge Characteristics
G
V
= 10V
DS
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0.001
0.1
1
1
10
100
P = 10s
W
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W
T
= 150°C
T = 25°C
Single Pulse
J(MAX)
A
0.01
0.1
V , DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
DS
I
, DRA
IN
CURRE
NT
(
A
)
D
R
Limited
DS(on)