Electrical characteristics q2 p-channel, Dmc1030ufdb – Diodes DMC1030UFDB User Manual
Page 5
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
5 of 9
April 2014
© Diodes Incorporated
DMC1030UFDB
Electrical Characteristics Q2 P-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
—
—
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
-1.0
μA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
37 59
mΩ
V
GS
= -4.5V, I
D
= -3.6A
—
48 81
V
GS
= -2.5V, I
D
= -3.1A
—
69 115
V
GS
= -1.8V, I
D
= -2.6A
—
88 215
V
GS
= -1.5V, I
D
= -0.5A
Diode Forward Voltage
V
SD
—
-0.7 -1.2 V
V
GS
= 0V, I
S
= -3.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
1028
—
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
285
—
pF
Reverse Transfer Capacitance
C
rss
—
254
—
pF
Gate Resistance
R
g
—
19.6
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
13
—
nC
V
DS
= -10V, I
D
= -4.7A
Total Gate Charge (V
GS
= -8V)
—
20.8
—
nC
Gate-Source Charge
Q
gs
—
1.8
—
nC
Gate-Drain Charge
Q
gd
—
4.5
—
nC
Turn-On Delay Time
t
D(on)
—
5.6
—
ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time
t
r
—
12.8
—
ns
Turn-Off Delay Time
t
D(off)
—
30.7
—
ns
Turn-Off Fall Time
t
f
—
25.4
—
ns
Body Diode Reverse Recovery Time
trr
—
31.6
—
nS
I
S
= -3.6A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
—
7.8
—
nC
I
S
= -3.6A, dI/dt = 100A/μs
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
V
= -0.9V
GS
V
= -1.0V
GS
V
= -3.5V
GS
V
= -4.5V
GS
V
= -4.0V
GS
V
= -1.5V
GS
V
= -1.8V
GS
V
= -2.0V
GS
V
= -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 13 Typical Transfer Characteristics
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V
= -5.0V
DS