Diodes DMP6185SK3 - Manual (Page 2)

DMP6185SK3
Document Number DS36658 Rev. 1 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP6185SK3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
C
= +25°C
T
C
= +100°C
I
D
-3.6
-2.8
A
Maximum Body Diode Continuous Current I
S
-2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-15 A
Avalanche Current (Notes 7) L = 0.1mH I
AS
-16 A
Avalanche Energy (Notes 7) L = 0.1mH E
AS
13 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.6
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
75
°C/W
t<10s 38
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.8
W
T
A
= +70°C 1.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
44
°C/W t<10s 20
Thermal Resistance, Junction to Case (Note 6) R
θJC
6.2
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-60 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
— — -1 µA V
DS
= -48V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0 — -3.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
—
120 150
mΩ
V
GS
= -10V, I
D
= -12A
150 185 V
GS
= -4.5V, I
D
= -8A
Diode Forward Voltage V
SD
— -0.75 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss — 708 — pF
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance Coss — 39 — pF
Reverse Transfer Capacitance Crss — 32 — pF
Gate Resistance Rg — 17 40 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Qg — 6.2 — nC
V
DS
= -30V, I
D
= -12A
Total Gate Charge (V
GS
= -10V) Qg — 14 — nC
Gate-Source Charge Qgs — 2.8 — nC
Gate-Drain Charge Qgd — 3.1 — nC
Turn-On Delay Time tD(on) — 5.2 — ns
V
DS
= -30V, R
L
= 2.5Ω
V
GS
= -10V, R
G
= 3Ω
Turn-On Rise Time tr — 23 — ns
Turn-Off Delay Time tD(off) — 33 — ns
Turn-Off Fall Time tf — 39 — ns
Body Diode Reverse Recovery Time trr — 22 — ns
I
F
= -12A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 17 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.