Maximum ratings, Thermal characteristics – Diodes DMP4051LK3 User Manual
Page 2
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
2 of 9
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4051LK3
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
-40 V
Gate-Source voltage
(Note 3)
V
GS
±20
V
Single Pulsed Avalanche Energy
(Note 9)
E
AS
50 mJ
Single Pulsed Avalanche Current
(Note 9)
I
AS
20.3 A
Continuous Drain current
V
GS
= 10V
(Note 5)
I
D
-10.5
A
T
A
= 70
°C (Note 5)
-8.40
(Note 4)
-7.2
Pulsed Drain current
V
GS
= 10V (Note 6)
I
DM
-28.9 A
Continuous Source current (Body diode)
(Note 5)
I
S
-10.1 A
Pulsed Source current (Body diode)
(Note 5)
I
SM
-28.9 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 4)
P
D
4.18
33.4
W
mW/
°C
(Note 5)
8.9
71.4
(Note 7)
2.14
17.1
Thermal Resistance, Junction to Ambient
(Note 4)
R
θJA
29.9
°C/W
(Note 5)
14.0
(Note 7)
58.4
Thermal Resistance, Junction to Lead
(Note 8)
R
θJL
2.46
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
3. AEC-Q101 V
GS
maximum is ±16V.
4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note 4, except the device is measured at t
≤ 10 sec.
6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 100µH, V
DD
= -40V.