Diodes DMP56D0UFB User Manual
Dmp56d0ufb, Product summary, Description

DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
1 of 5
June 2013
© Diodes Incorporated
DMP56D0UFB
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
-50V
6Ω @ V
GS
= -4 V
-200mA
8Ω @ V
GS
= -2.5V
-160mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Features and Benefits
Low
On-Resistance
ESD
Protected
Gate
Low Input/Output Leakage
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals:
Finish
NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.001 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP56D0UFB
-7 X1-DFN1006-3 3000/Tape & Reel
DMP56D0UFB
-7B
X1-DFN1006-3
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
X-DFN1006-3
Equivalent Circuit
Top View
Internal Schematic
Bottom View
D
S
G
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
D3 = Product Type Marking Code
DMP56D0UFB
-7
DMP56D0UFB
-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
ESD PROTECTED
D3
D3
Green
e4