Electrical characteristics – Diodes DMP4050SSS User Manual
Page 4
DMP4050SSS
Document Number DS32108 Rev 1 - 2
4 of 8
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4050SSS
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40
⎯
⎯
V
I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-0.5
μA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
-3.0 V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 7)
R
DS (ON)
⎯
0.038 0.050
Ω
V
GS
= -10V, I
D
= -6A
0.055 0.079
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance (Notes 7 & 8)
g
fs
⎯
14
⎯
S
V
DS
= -15V, I
D
= -6A
Diode Forward Voltage (Note 7)
V
SD
⎯
-0.86 -1.2 V
I
S
= -6A, V
GS
= 0V
Reverse recovery time (Note 8)
t
rr
18.5
⎯
ns
I
S
= -2.5, di/dt= 100A/
μs
Reverse recovery charge (Note 8)
Q
rr
⎯
15.6
⎯
nC
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
674
⎯
pF
V
DS
= -20V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
115
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
67.7
⎯
pF
Total Gate Charge (Note 9)
Q
g
⎯
6.9
⎯
nC
V
GS
= -4.5V
V
DS
= -20V
I
D
= -6A
Total Gate Charge (Note 9)
Q
g
⎯
13.9
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 9)
Q
gs
⎯
2
⎯
nC
Gate-Drain Charge (Note 9)
Q
gd
⎯
3.4
⎯
nC
Turn-On Delay Time (Note 9)
t
D(on)
⎯
1.9
⎯
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9)
t
r
⎯
3.1
⎯
ns
Turn-Off Delay Time (Note 9)
t
D(off)
⎯
31.5
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
12.6
⎯
ns
Notes:
7. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.