Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP4047LFDE User Manual
Page 2
DMP4047LFDE
D
atasheet number: DS35777 Rev. 5 - 2
2 of 6
July 2012
© Diodes Incorporated
DMP4047LFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-40 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.3
-2.6
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.3
-4.2
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6.0
-4.8
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-9.5
-7.6
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-40 A
Maximum Body Diode Continuous Current
I
S
3 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.7
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
180
°C/W
t<5s 76
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.1
W
T
A
= +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
58
°C/W
t<5s 25
Thermal Resistance, Junction to Case (Note 6)
R
θJC
10.2
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-40 — — V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0 — -2.2 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
—
26 33
m
Ω
V
GS
= -10V, I
D
= -4.4A
36 50
V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance
|Y
fs
|
—
5.2 — S
V
DS
= -15V, I
D
= -4.4A
Diode Forward Voltage
V
SD
—
0.75 1.2 V V
GS
= 0V, I
S
= -3.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1382 — pF
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 103 — pF
Reverse Transfer Capacitance
C
rss
— 81 — pF
Gate Resistance
R
g
— 7.7 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 11.2 — nC
V
DS
= -20V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V)
Q
g
— 23.2 — nC
Gate-Source Charge
Q
gs
— 3.3 — nC
Gate-Drain Charge
Q
gd
— 3.9 — nC
Turn-On Delay Time
t
D(on)
— 18.4 — ns
V
DS
= -20V, I
D
= -3.9A
V
GS
= 4.5V, R
G
= 1
Ω
Turn-On Rise Time
t
r
— 28.2 — ns
Turn-Off Delay Time
t
D(off)
— 38.8 — ns
Turn-Off Fall Time
t
f
— 28.6 — ns
Reverse Recovery Time
t
rr
— 15.4 — ns
I
F
= -3.9A, di/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
— 5.4 — nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing