Diodes DMP4015SPSQ - Manual (Page 4)

DMP4015SPSQ
Document number: DS36681 Rev. 2 - 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMP4015SPSQ
NEW PROD
UC
T
POWERDI is a registered trademark of Diodes Incorporated
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
-V
, G
A
TE
T
HRESHO
L
D VOL
TA
G
E (
V
)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
2
2.4
-I
,
SOURCE C
URRENT
(
A
)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0 5 10 15 20 25 30
f = 1MHz
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30
T =150°C
A
T =125°C
A
T =85°C
A
T =25°C
A
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V
, G
A
T
E
-S
O
URC
E VO
LT
AG
E
(
V
)
GS
0 20 40 60 80 100 120
0.2 0.4 0.6 0.8 1.0
INDUCTOR (mH)
Fig. 12 Single-Pulse Avalanche Tested
0
10
20
30
40
50
60
70
80
90
I,
A
V
A
LA
N
C
HE
C
U
R
R
EN
T
(A
)
AS
0
100
200
300
400
500
600
E,
A
V
A
L
A
N
C
H
E E
N
E
R
G
Y
(mJ
)
AS
E
AS
I
AS
0.1 0.3 0.5 0.7 0.9
Starting Temperature (T ) = 25°C
J