Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP4015SK3Q User Manual
Page 2
DMP4015SK3Q
Document number: DS36665 Rev. 12- 2
2 of 7
December 2013
© Diodes Incorporated
DMP4015SK3Q
Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-40 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
-35
-27
A
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-14
-11
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-22
-18
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-100 A
Maximum Body Diode Forward Current (Note 6)
I
S
-5.5 A
Avalanche Current (Note 7)
I
AS
-57 A
Avalanche Energy (Note 7)
E
AS
162 mJ
Thermal Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
3.5
W
T
A
= +70°C
2.2
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
36
°C/W
t<10s 15
Thermal Resistance, Junction to Case (Note 6)
Steady state
R
θJC
4.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40
⎯
⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µ
A
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.5 -2 -2.5 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
7 11
mΩ
V
GS
= -10V, I
D
= -9.8A
⎯
9 15
V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance
|Y
fs
|
⎯
26
⎯
S
V
DS
= -20V, I
D
= -9.8A
Diode Forward Voltage
V
SD
⎯
-0.7 -1 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
4234
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
1036
⎯
Reverse Transfer Capacitance
C
rss
⎯
526
⎯
Gate Resistance
R
G
⎯
7.77
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
⎯
47.5
⎯
nC
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge
Q
gs
⎯
14.2
⎯
Gate-Drain Charge
Q
gd
⎯
13.5
⎯
Turn-On Delay Time
t
D(on)
⎯
13.2
⎯
ns
V
GS
= -10V, V
DD
= -20V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time
t
r
⎯
10
⎯
Turn-Off Delay Time
t
D(off)
⎯
302.7
⎯
Turn-Off Fall Time
t
f
⎯
137.9
⎯
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. UIS in production with L = 0.1mH, T
J
= +25°C.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.