Dmp3130l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3130L User Manual
Page 2: Electrical characteristics, Dmp3130l
DMP3130L
Document number: DS31524 Rev. 6 - 2
2 of 6
October 2013
© Diodes Incorporated
DMP3130L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
12
V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25
C
T
A
= 70
C
I
D
-3.5
-2.6
A
t<10s
T
A
= 25
C
T
A
= 70
C
I
D
-4.1
-3.2
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-1.6 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-20 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.7
W
T
A
= 70°C
0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
184
°C/W
t<10s 115
Total Power Dissipation (Note 6)
T
A
= 25°C
P
D
1.3
W
T
A
= 70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
94
°C/W
t<10s 61
Thermal Resistance, Junction to Case
R
JC
25
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.6
-1.3 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
59 77
mΩ
V
GS
= -10V, I
D
= -4.2A
73 95
V
GS
= -4.5V, I
D
= -4A
115 150
V
GS
= -2.5V, I
D
= -3A
Forward Transconductance
g
fs
8
S
V
DS
= -5V, I
D
= -4A
Source-Drain Diode Forward Voltage
V
SD
0.8 -1.25 V V
GS
= 0V, I
S
= -3.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
432 864 pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
87 174 pF
Reverse Transfer Capacitance
C
rss
62 124 pF
Gate Resistance
R
G
4.04
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
G
5.9 11.8
nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -4.0A
12 24
V
DS
= -15V, V
GS
= -10V, I
D
= -4.0A
Gate-Source Charge
Q
GS
1.0 2.0
V
DS
= -15V, V
GS
= -4.5V, I
D
= -4.0A
Gate-Drain Charge
Q
GD
3.1 6.2
Turn-On Delay Time
t
d(on)
4.6 9.2
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time
t
r
6.5 13.0
Turn-Off Delay Time
t
d(off)
27.8 55.6
Fall Time
t
f
15.0 30.0
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing