Diodes DMP3160L User Manual
Dmp3160l, Product summary, Description

DMP3160L
Document number: DS31268 Rev. 8 - 2
1 of 5
October 2013
© Diodes Incorporated
DMP3160L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
-30V
122mΩ @ V
GS
= -10V
-2.7A
190mΩ @ V
GS
= -4.5V
-2.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power Management Functions
Features
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case:
SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals:
Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4 & 5)
Part Number
Compliance Case
Packaging
DMP3160L
-7
Standard
SOT23
3000/Tape & Reel
DMP3160LQ
-7
Automotive
SOT23
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
same, except where specified. For more information, please refer
Marking Information
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code U V W X Y Z A B C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
D
G
S
Top View
PS3 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Source
Body
Diode
Gate
Drain
Equivalent Circuit
e3
Chengdu A/T Site
Shanghai A/T Site