Diodes DMP3098LSS - Manual (Page 2)

DMP3098LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
-30 ⎯ ⎯ V V GS = 0V, I D = -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-1 ⎯ -2.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯ 56
98 65
115
m
Ω
V
GS
= -10V, I
D
= -5.3A
V
GS
= -4.5V, I
D
= -4.2A
Forward Transconductance g fs
⎯ 5.2 ⎯ S V DS = -10V, I D = -5.3A
Diode Forward Voltage (Note 5) V
SD
-0.5 ⎯ -1.2 V V
GS
= 0V, I
S
= -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 336 ⎯ pF
Output Capacitance C
oss
⎯ 70 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 49 ⎯ pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Gate Resistance R
G
⎯ 4.6 ⎯ Ω V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Q
G
⎯ 4.0 ⎯ nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -5.0A Total Gate Charge
Q
G
⎯ 7.8 ⎯
Gate-Source Charge Q GS
⎯ 1.0 ⎯
Gate-Drain Charge Q
GD
⎯ 2.5 ⎯
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -5.0A
Turn-On Delay Time t
d(on)
⎯ 6.0 ⎯
Rise Time t
r
⎯ 5.0 ⎯
Turn-Off Delay Time t
d(off)
⎯ 17.6 ⎯
Fall Time t
f
⎯ 9.5 ⎯
ns
V
DS
= -15V, V
GS
= -10V,
I D = -1A, R G = 6.0
Ω
NEW PROD
UC
T
Notes: 5. Short duration pulse test used to minimize self-heating effect.
-I
, D
RA
IN CU
RRENT
(
A
)
D
Fig. 1 Typical Output Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
0 1 2 3 4 5
V = -2.5V
GS
V = -4.5V
GS
V = -10V
GS
V = -1.5V
GS
V = -3.0V
GS
Fig. 2 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
4
8
12
16
20
1 2 3 4 5 6
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
DMP3098LSS
Document number: DS31265 Rev. 4 - 2
2 of 5
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September 2008
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