Diodes DMP3056LSS - Manual (Page 2)

DMP3056LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
-30 ⎯ ⎯ V V GS = 0V, I D = -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯
±100
±800
nA
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-1 1.7 -2.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
⎯
45
65
m Ω
V
GS
= -10V, I
D
= -6.0A
V
GS
= -4.5V, I
D
= -5.0A
Forward Transconductance g
fs
⎯ 8 ⎯ S V
DS
= -10V, I
D
= -5.3A
Diode Forward Voltage (Note 5) V
SD
-0.5 ⎯ -1.2 V V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 722 ⎯ pF
Output Capacitance C
oss
⎯ 114 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 92 ⎯ pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Gate Resistance R
G
⎯ 3.3 ⎯ Ω V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Q
G
⎯ 6.8 ⎯ nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A Total Gate Charge
Q
G
⎯ 13.7 ⎯
Gate-Source Charge Q
GS
⎯ 1.6 ⎯
Gate-Drain Charge Q
GD
⎯ 4.18 ⎯
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
Turn-On Delay Time t
d(on)
⎯ 6.4 ⎯
Rise Time t r
⎯ 5.3 ⎯
Turn-Off Delay Time t
d(off)
⎯ 26.5 ⎯
Fall Time t
f
⎯ 14.7 ⎯
ns
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0
Ω
NEW PRODUCT
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristics
0
1
2
3
4
5
6
7
8
9
10
11
12
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = -10V
GS
V = -4.5V
GS
V = -3.0V
GS
V = -2.5V
GS
V = -1.5V
V = -1.0V
GS
GS
Fig. 2 Typical Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
10
-V , GATE SOURCE VOLTAGE (V)
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
1 1.5 2 2.5 3 3.5 4
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
Pulsed
DS
DMP3056LSS
Document number: DS31419 Rev. 6 - 2
2 of 4
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September 2008
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