Diodes DMP3050LVT - Manual (Page 2)

DMP3050LVT
Document number: DS35763 Rev. 3 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LVT
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage (Note 5) V GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25
°C
T
A
= +70 °C
I
D
-4.5
-3.5
A
t<10s
T
A
= +25 °C
T A = +70
°C
I
D
-5.2
-4.1
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-2 A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-30 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
72
°C/W t<10s 51
Thermal Resistance, Junction to Case (Note 6) Steady State R θJC 24
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
- - -1 μA V DS = -30V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0 - -2.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 38 50
mΩ
V
GS
= -10V, I
D
= -4.5A
- 65 90 V
GS
= -4.5V, I
D
= -3A
Forward Transfer Admittance |Y
fs
| - 7.2 - S V
DS
= -5V, I
D
= -5A
Diode Forward Voltage V
SD
- -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 620 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 83 - pF
Reverse Transfer Capacitance C
rss
- 62 - pF
Gate resistance R
g
- 10.8 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 5.1 - nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V
GS
= 10V) Q
g
- 10.5 - nC
Gate-Source Charge Q
gs
- 1.8 - nC
Gate-Drain Charge Q
gd
- 1.9 - nC
Turn-On Delay Time t
D(on)
- 6.8 - ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6 Ω, I
D
= -1A
Turn-On Rise Time t r
- 4.9 - ns
Turn-Off Delay Time t
D(off)
- 28.4 - ns
Turn-Off Fall Time t
f
- 12.4 - ns
Notes: 5. AEC-Q101 V
GS
maximum is ±20V
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.