Dmp3050lss new prod uc t, Dmp3050lss – Diodes DMP3050LSS User Manual
Page 4
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
4 of 6
September 2012
© Diodes Incorporated
DMP3050LSS
NEW PROD
UC
T
0
0.02
0.04
0.06
0.08
0.10
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 7 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
D
S
(on)
Ω
V
= -10V
I =
A
GS
D
-10
V
=
5V
I =
A
GS
D
-4.
-5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V
)
GS
(T
H
)
0
4
8
12
16
20
0.4
0.6
0.8
1.0
1.2
1.4
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
10
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
100
0
5
10
15
20
25
30
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
12
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ