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Dmp3020lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3020LSS User Manual

Page 2: Electrical characteristics, Dmp3020lss

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DMP3020LSS

Document number: DS31263 Rev. 11 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMP3020LSS

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

25

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-12

-6

A

Pulsed Drain Current (Note 6)

I

DM

-40 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

2.5 W

Thermal Resistance, Junction to Ambient

R

JA

50 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-1

μA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

=

20V, V

DS

= 0V

800

V

GS

=

25V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1

-2 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)



11.6
18.6

14
25

mΩ

V

GS

= -10V, I

D

= -8A

V

GS

= -4.5V, I

D

= -5A

Forward Transconductance

g

fs

12

S

V

DS

= -10V, I

D

= -12A

Diode Forward Voltage (Note 7)

V

SD

-0.5

-1.1 V

V

GS

= 0V, I

S

= -2A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

1802

pF

V

DS

= -15V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

415

pF

Reverse Transfer Capacitance

C

rss

295

pF

Gate Resistance

R

G



2.3



V

GS

= 0V, V

DS

= 0V, f = MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Q

g



15.3
30.7



nC

V

DS

= -15V, V

GS

= -4.5V, I

D

= -8A

V

DS

= -15V, V

GS

= -10V, I

D

= -8A

Gate-Source Charge

Q

gs



3.5



V

DS

= -15V, V

GS

= -10V, I

D

= -8A

Gate-Drain Charge

Q

gd



7.9



V

DS

= -15V, V

GS

= -10V, I

D

= -8A

Turn-On Delay Time

t

d(on)



5.1



ns

V

GS

= -10V, V

DS

= -15V,

R

D

= 15Ω, R

G

= 6Ω

Rise Time

t

r



8



Turn-Off Delay Time

t

d(off)



46



Fall Time

t

f



30



Notes:

5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R

JA

= 50°C/W.

6. Pulse width

10μs, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.