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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP3015LSS User Manual

Page 2: Dmp3015lss

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DMP3015LSS

Document number: DS31472 Rev. 6 - 2

2 of 5

www.diodes.com

October 2013

© Diodes Incorporated

DMP3015LSS



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

20

V

Drain Current (Note 5) Steady
State

T

A

= +25°C

T

A

= +70°C

I

D

-13

-9.75

A

Pulsed Drain Current (Note 6)

I

DM

-45 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

2.5 W

Thermal Resistance, Junction to Ambient

R

JA

50 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes:

5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R

JA

= 50°C/W.

6. Pulse width

10μS, Duty Cycle 1%.




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-1

A

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

=

20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1

-2 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)



9

14

11
17

mΩ

V

GS

= -10V, I

D

= -13A

V

GS

= -4.5V, I

D

= -10A

Forward Transconductance

g

fs

15

S

V

DS

= -15V, I

D

= -8A

Diode Forward Voltage (Note 7)

V

SD

-0.5

-1.1 V

V

GS

= 0V, I

S

= -2.1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

2748

pF

V

DS

= -20V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

357

pF

Reverse Transfer Capacitance

C

rss

356

pF

Gate Resistance

R

G



2.0



V

DS

= 0V, V

GS

= 0V

f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Q

g



30.0

60.4



nC

V

DS

= -10V, V

GS

= -4.5V, I

D

= -13A

V

DS

= -10V, V

GS

= -10V, I

D

= -13A

Gate-Source Charge

Q

gs



7.2



V

DS

= -10V, V

GS

= -10V, I

D

= -13A

Gate-Drain Charge

Q

gd



16.4



V

DS

= -10V, V

GS

= -10V, I

D

= -13A

Turn-On Delay Time

t

d(on)



11.2



ns

V

DS

= -15V, V

GS

= -10V,

I

D

= -1A, R

G

= 6.0Ω

Rise Time

t

r



12.4



Turn-Off Delay Time

t

d(off)



104.9



Fall Time

t

f



61.7



Notes:

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.