Diodes DMG7401SFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 10 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMG7401SFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V GSS
±25 V
Continuous Drain Current (Note 6) V GS = -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.8
-7.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-13.5
-10.8
A
Maximum Continuous Body Diode Forward Current (Note 5) I S
-3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-80 A
Avalanche Current (Notes 7 & 8) I
AR
14 A
Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH E AR
104 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.94
W
T
A
= +70°C 0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
137 °C/W
t<10s 82 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P D
2.2
W
T
A
= +70°C 1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
60 °C/W
t<10s 36 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJC 3.0 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
— — -1 μA V DS = -30V, V GS = 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.7 — -3.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 9 11
m Ω
V
GS
= -20V, I
D
= -12A
— 10 13 V
GS
= -10V, I
D
= -9A
— 17 25 V
GS
= -4.5V, I
D
= -5A
Forward Transfer Admittance |Y
fs
| — 21 — S V
DS
= -5V, I
D
= -10A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2246 2987 pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 352 468 pF
Reverse Transfer Capacitance C
rss
— 294 391 pF
Gate resistance R g
— 5.1 8.5 Ω V DS = 0V, V GS = 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 20.5 30 nC
V
DS
= -15V, I
D
= -12A
Total Gate Charge (V
GS
= 10V) Q
g
— 41 58 nC
Gate-Source Charge Q gs
— 7.6 - nC
Gate-Drain Charge Q
gd
— 8.0 - nC
Turn-On Delay Time t
D(on)
— 11.3 23 ns
V
DD
= -15V, V
GS
= -10V,
R
L
= 1.25 Ω, R
G
= 3 Ω,
Turn-On Rise Time t
r
— 15.4 31 ns
Turn-Off Delay Time t
D(off)
— 38.0 61 ns
Turn-Off Fall Time t
f
— 22.0 38 ns
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
— -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
Reverse Recovery Time (Note 9) t
rr
— 20 31 ns
I
S
= -9.5A, dI/dt = 100A/ μs
Reverse Recovery Charge (Note 9) Q rr
— 9.5 18 nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to product testing