Diodes DMG3407SSN User Manual
Product summary, Description and applications, Features and benefits

DMG3407SSN
Document number: DS35135 Rev. 5 - 2
1 of 6
April 2012
© Diodes Incorporated
DMG3407SSN
ADVAN
CE I
N
F
O
RM
ATI
O
N
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
-30V
50m
Ω @ V
GS
= -10V
-4.0A
72m
Ω @ V
GS
= -4.5V
-3.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load
Switch
• DC-DC
Converters
•
Power management functions
Features and Benefits
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead-Free Finish; RoHS compliant (Note 1)
•
Halogen and Antimony Free. “Green” Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SC59
•
Case Material – Molded Plastic. UL Flammability Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.014 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMG3407SSN-7
SC59
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
Code X
Y
Z
A
B
C D
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SC59
Top View
Pin Configuration
Source
Gate
Drain
Internal Schematic
D
G
S
G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
G32
YM