Diodes DMP22D6UT User Manual
Dmp22d6ut new prod uc t, Features, Mechanical data
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
ESD Protected Gate
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
SOT-523
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.002 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 1)
Steady
State
T
A
= 25
°C
T
A
= 85
°C
I
D
-430
-310
mA
Pulsed Drain Current (Note 3)
I
DM
-750 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 1)
P
D
150 mW
Thermal Resistance, Junction to Ambient
R
θJA
833 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250mA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±1.0
μA
V
GS
=
±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.5
⎯
-1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
0.7
1.1
1.7
1.1
1.6
2.6
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
⎯
⎯
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 5)
V
SD
⎯
⎯
-1.4 V
V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
30 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
20 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse
width
≤10μS, Duty Cycle ≤1%
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
TOP VIEW
Equivalent Circuit
TOP VIEW
Source
Gate
Protection
Diode
Gate
Drain
G
S
D
ESD PROTECTED