Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP21D5UFD User Manual
Page 2
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
2 of 6
August 2012
© Diodes Incorporated
DMP21D5UFD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-600
-500
mA
Continuous Drain Current (Note 6) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-400
-300
mA
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-2 A
Maximum Body Diode continuous Current
I
S
-800 mA
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
0.4 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
280 °C/W
Total Power Dissipation (Note 6)
P
D
0.8 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
140 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 —
—
V
V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
-80
-100
nA
V
DS
= -4.5V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10.0 µA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 — -1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
—
0.7 1.0
Ω
V
GS
= -4.5V, I
D
= -100mA
—
0.9 1.5
V
GS
= -2.5V, I
D
= -80mA
—
1.2 2.0
V
GS
= -1.8V, I
D
= -40mA
—
1.5 3.0
V
GS
= -1.5V, I
D
= -30mA
—
5 —
V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance
|Y
fs
|
—
0.7 —
S
V
DS
= -3V, I
D
= -100mA
Diode Forward Voltage
V
SD
—
-0.75 -1.2 V V
GS
= 0V, I
S
= -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
46.1 —
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
7.2 —
Reverse Transfer Capacitance
C
rss
—
4.9 —
Total Gate Charge V
GS
= -4.5V
Q
g
—
0.5 —
nC
V
DS
= -10V, I
D
= -250mA
Total Gate Charge V
GS
= -8V
Q
g
—
0.8 —
Gate-Source Charge
Q
gs
—
0.1 —
Gate-Drain Charge
Q
gd
—
0.1 —
Turn-On Delay Time
t
D(on)
—
8.5 —
ns
V
DD
= -3V, V
GS
= -2.5V,
R
L
= 300
Ω, R
G
= 25
Ω,
I
D
= -100mA
Turn-On Rise Time
t
r
—
4.3 —
Turn-Off Delay Time
t
D(off)
—
20.2 —
Turn-Off Fall Time
t
f
—
19.2 —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.