Diodes DMP2160U - Manual (Page 2)

DMP2160U
Document number: DS31586 Rev. 8 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated
DMP2160U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
T
A
= +25 C
T
A
= +70 C
I
D
-3.3
-2.6
A
Pulsed Drain Current I
DM
-13 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.4 W
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
90 °C/W
Thermal Resistance, Junction to Case (Note 5) R
θJC
22 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20   V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25 C I
DSS
  -1.0 μA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS

 
 100
800
nA
V
GS
= 8V, V
DS
= 0V
V
GS
= 12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -0.9 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)

60
73
92 75
96
140
mΩ
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -1.2A
Forward Transconductance g
FS
 7  S V
DS
= -10V, I
D
= -1.5A
Diode Forward Voltage (Note 5) V
SD
  -1.0 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
 627  pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 64  pF
Reverse Transfer Capacitance C
rss
 53  pF
Gate Resistance R
G
 44.9  Ω V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
 6.5  nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3A Gate-Source Charge Q
gs
 0.9  nC
Gate-Drain Charge Q
gd
 1.5  nC
Turn-On Delay Time t
D(on)
 12.5  ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10Ω, R
G
= 1.0Ω, I
D
= -1A
Turn-On Rise Time t
r
 10.3  ns
Turn-Off Delay Time t
D(off)
 46.5  ns
Turn-Off Fall Time t
f
 22.2  ns
Notes: 5. Device mounted on 1in 2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.