Diodes DMP210DUFB4 - Manual (Page 2)

DMP210DUFB4
Document number: DS35026 Rev. 6 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP210DUFB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±10 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-200
-160
mA
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-140
-110
mA
Pulsed Drain Current T
P
= 10µs I
DM
-600 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
357 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20   V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS

 
 -100
-50
nA
nA V
DS
= -16V, V
GS
= 0V
V
DS
= -5.0V, V
GS
= 0V
Gate-Source Leakage I
GSS
 
100
1
10
nA
µA
µA V
GS
= 5.0V, V
DS
= 0V
V
GS
= 8.0V, V
DS
= 0V
V
GS
= 10.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5  -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
  5 
Ω
V
GS
= -4.5V, I
D
= -100mA
  7 V
GS
= -2.5V, I
D
= -50mA
  10 V
GS
= -1.8V, I
D
= -20mA
  15 V
GS
= -1.5V, I
D
= -10mA
 20  V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance |Y
fs
| 200   mS V
DS
= -10V, I
D
= -200mA
Diode Forward Voltage (Note 5) V
SD
-0.5  -1.2 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
 13.72 175 pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 4.01 30 pF
Reverse Transfer Capacitance C
rss
 2.34 20 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
d(on)
 7.7 
ns
V
GS
= -4.5V, V
DD
= -15V
I
D
= -180mA, R
G
= 2.0Ω
Rise Time t
r
 19.3 
Turn-Off Delay Time t
d(off)
 25.9 
Fall Time t
f
 31.5 
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.