Diodes DMP2123L - Manual (Page 2)

DMP2123L
Document number: DS31440 Rev. 2 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP2123L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
12 V
Drain Current (Note 5) Continuous T
A
= +25°C
T
A
= +70°C
I
D
-3.0
-2.4
A
Pulsed Drain Current (Note 6) I
DM
-15 A
Body-Diode Continuous Current (Note 5) I
S
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
1.4 W
Thermal Resistance, Junction to Ambient (Note 5); Steady-State R
θJA
90 C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 C
Notes: 5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
6. Repetitive Rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
-20   V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
  -1 µA V
DS
= -20V, V
GS
= 0V
Gate-Body Leakage Current I
GSS
  100 nA V
DS
= 0V, V
GS
= 12V
Gate Threshold Voltage V
GS(th)
-0.6  -1.25 V V
DS
= V
GS
, I
D
= -250µA
On State Drain Current (Note 7) I
D (ON)
-15   A V
GS
= -4.5V, V
DS
= -5V
Static Drain-Source On-Resistance (Note 7) R
DS(ON)

51
87
99 72
108
123 m 
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.7V, I
D
= -3.0A
V
GS
= -2.5V, I
D
= -2.6A
Forward Transconductance (Note 7) g
FS
 7.3  S V
DS
= -10V, I
D
= -3.0A
Diode Forward Voltage (Note 5) V
SD
 0.79 -1.26 V I
S
= -1.7A, V
GS
= 0V
Maximum Body-Diode Continuous Current (Note 5) I
S
  1.7 A 
DYNAMIC PARAMETERS (Note 8)
Total Gate Charge
Q
g
 7.3  nC V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
Gate-Source Charge Q
gs
 2.0  nC V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
Gate-Drain Charge Q
gd
 1.9  nC V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
Turn-On Delay Time t
D(on)
 12  ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10 , R
G
= 6 
Turn-On Rise Time t
r
 20  ns
Turn-Off Delay Time t
D(off)
 38  ns
Turn-Off Fall Time t
f
 41  ns
Input Capacitance C
iss
 443  pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 128  pF
Reverse Transfer Capacitance C
rss
 101  pF
Notes: 7. Test pulse width t = 300µs.
8. Guaranteed by design. Not subject to production testing.