Diodes DMP2104V - Manual (Page 2)

DMP2104V
Document number: DS30942 Rev. 7 - 2
2 of 6
www.diodes.com
March 2011
© Diodes Incorporated
DMP2104V
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 4) V
GS
= -4.5V
Steady
State
T A = 25°C
T
A
= 70°C
I
D
-1.9
-1.5
A
Continuous Drain Current (Note 4) V
GS
= -4.5V t
≤ 5s
T
A
= 25°C
T
A
= 70°C
I
D
-2.1
-1.65
A
Continuous Drain Current (Note 4) V GS = -2.5V
Steady
State
T
A
= 25°C
T A = 70°C
I D
-1.7
-1.3
A
Pulsed Drain Current t
p
= 10
μs I
DM
-4.0 A
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation (Note 4) P
D
0.85 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 146 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current T
J
= 25 °C
T
J
= 125 °C
I
DSS
⎯ ⎯
-1.0
-5.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±100 nA V
GS =
±12V, V
DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.45 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
92
134
180
150
200
240
m
Ω
V GS = -4.5V, I D = -950mA
V
GS
= -2.5V, I
D
= -670mA
V
GS
= -1.8V, I
D
= -200mA
Forward Transconductance g FS
⎯ 3.1 ⎯ S V DS = -10V, I D = -810mA
Diode Forward Voltage (Note 5) V
SD
⎯ ⎯ -0.9 V V
GS
= 0V, I
S
= -360mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
⎯ 320 ⎯ pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 80 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 60 ⎯ pF
Notes: 4. Device mounted on FR-4 PCB with 1 inch square pads.
5. Short duration pulse test used to minimize self-heating effect.