Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2100UCB9 User Manual
Page 2
DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
2 of 6
July 2013
© Diodes Incorporated
DMP2100UCB9
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
D1D2
-20 V
Gate-Source Voltage
V
GS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D1D2
-3.0
-2.1
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D1D2
-4.0
-3.0
A
Continuous Source Pin Current (Note 6)
I
S
-2.0 A
Continuous Gate Clamp Current (Note 6)
I
G
-0.4 A
Pulsed Source Pin Current (Pulse duration 10
μs, duty cycle ≤ 1%)
I
SM
-15 A
Pulsed Drain Current (Pulse duration 10
μs, duty cycle ≤ 1%)
I
DM
-28 A
Pulsed Gate Clamp Current (Pulse duration 10
μs, duty cycle ≤ 1%)
I
GM
-6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
P
D
0.8 W
Total Power Dissipation (Note 6)
P
D
1.6 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
152 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
65 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
D1D2
-20 — — V
V
GS
= 0V, I
D1D2
= -250
μA
Gate-Source Breakdown Voltage
BV
GSS
-6.1
— — V
I
GS
= -250
μA, V
D1D2
= 0V
Zero Gate Voltage Drain Current @T
C
= +25°C
I
DDS
— — -1
μA
V
D1D2
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
-100 nA
V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.7 -0.9 V
V
D1D2
= V
GS
, I
DS
= -250
μA
Static Drain-Source On-Resistance
R
D1D2(ON)
—
—
—
80 100
m
Ω
V
GS
= -4.5V, I
D1D2
=- 1A
105 130
V
GS
= -2.5V, I
D1D2
= -1A
140 175
V
GS
= -1.8V, I
D1D2
= -1A
Forward Transfer Admittance
|Y
fs
|
— 5.3 — S
V
D1D2
= -10V, I
D1D2
= -1A
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)
V
SD
—
-0.7 -1 V
V
GS
= 0V, I
D1D2
= -1A
Reverse Recovery Charge
Q
rr
—
18
—
nC
V
dd
= -9.5V, I
F
= -1A,
di/dt = 200A/
μs
Reverse Recovery Time
t
rr
—
34
—
ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
232 310 pF
V
D1D2
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 107
150 pF
Reverse Transfer Capacitance
C
rss
— 43.5
55 pF
Total Gate Charge (4.5V)
Q
g
— 3.3
4.2 nC
V
GS
= -4.5V, V
D1D2
= -10V,
I
D1D2
= -1A
Gate-Source Charge
Q
gs
— 0.3
—
nC
Gate-Drain Charge
Q
gd
— 0.6
—
nC
Gate Charge at V
th
Q
g(th)
— 0.2
—
nC
Turn-On Delay Time
t
D(on)
— 8.5
—
ns
V
D1D2
= -10V, V
GS
= -4.5V,
I
D1D2
= -1A, R
G
= 30
Ω,
Turn-On Rise Time
t
r
— 7.0
—
ns
Turn-Off Delay Time
t
D(off)
— 47
—
ns
Turn-Off Fall Time
t
f
— 28
—
ns
Notes: 5.
Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.