Diodes DMP2100U - Manual (Page 2)

DMP2100U
Document number: DS35718 Rev. 6 - 2
2 of 6
www.diodes.com
April 2013
© Diodes Incorporated
DMP2100U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage (Note 6) V
GSS
±10 V
Continuous Drain Current (Note 8) V
GS
= -10V
Steady
State T
A
= +25°C
T
A
= +70°C
I
D
-4.3
-3.4
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.5
-4.3
A
Maximum Continuous Body Diodes Forward Current (Note 8) I
S
-2 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) I
DM
-30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
0.8
W
T
A
= +70°C 0.5
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
R
θJA
161
°C/W
t<5s 96
Total Power Dissipation (Note 8)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 8)
Steady State
R
θJA
99
°C/W t<5s 60
Thermal Resistance, Junction to Case (Note 8) R
θJC
15
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-0.3 — -1.4 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
— 25 38
mΩ
V
GS
= -10V, I
D
= -3.5A
— 29 43 V
GS
= -4.5V, I
D
= -3A
— 37 75 V
GS
= -2.5V, I
D
= -1A
— 47 — V
GS
= -1.8V, I
D
= -0.5A
Forward Transfer Admittance |Y
fs
| — 3 — S V
DS
= -5V, I
D
= -4A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 216 — pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 90 — pF
Reverse Transfer Capacitance C
rss
— 24 — pF
Gate Resistnace R
g
— 250 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 10)
Total Gate Charge
Q
g
— 9.1 — nC
V
GS
= -4.5V, V
DS
= -10V
I
D
= -4A
Gate-Source Charge Q
gs
— 1.6 — nC
Gate-Drain Charge Q
gd
— 2.0 — nC
Turn-On Delay Time t
D(on)
— 80 — ns
V
DS
= -10V, V
GS
= -4.5V,
R
D
= 2.5Ω, R
G
= 3.0Ω
Turn-On Rise Time t
r
— 155 — ns
Turn-Off Delay Time t
D(off)
— 688 — ns
Turn-Off Fall Time t
f
— 423 — ns
Notes: 6. AEC-Q101 V
GS
maximum is ±9.6V
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.