Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2066UFDE User Manual
Page 2: Dmp2066ufde

DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
2 of 6
July 2012
© Diodes Incorporated
DMP2066UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6.2
-4.9
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-7.5
-5.9
A
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.2
-3.4
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.2
-4.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-25 A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
2.5 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
P
D
0.66 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
189 °C/W
t<5s 123
°C/W
Total Power Dissipation (Note 5)
P
D
2.03 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
61 °C/W
t<5s 40
°C/W
Thermal Resistance, Junction to Case (Note 5)
R
θJc
9.3 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1
µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±12.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4
⎯
-1.1 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
25 36
m
Ω
V
GS
= -4.5V, I
D
= -4.6A
⎯
33 56
V
GS
= -2.5V, I
D
= -3.8A
⎯
50 75
V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
|
⎯
9
⎯
S
V
DS
= -10V, I
D
= -4.5A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.2 V
V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
1537
⎯
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
146
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
127
⎯
pF
Gate Resistance
R
g
⎯
10.4
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
⎯
14.4
⎯
nC
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4.5A
Gate-Source Charge
Q
gs
⎯
2.6
⎯
Gate-Drain Charge
Q
gd
⎯
2.7
⎯
Turn-On Delay Time
t
D(on)
⎯
13.7
⎯
ns
V
DD
= -10V, V
GS
= -4.5V, R
G
= 6
Ω,
R
L
= 10
Ω, I
D
= -1A
Turn-On Rise Time
t
r
⎯
14.0
⎯
Turn-Off Delay Time
t
D(off)
⎯
79.1
⎯
Turn-Off Fall Time
t
f
⎯
35.5
⎯
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.