Diodes DMP2047UCB4 - Manual (Page 2)

DMP2047UCB4
Document number: DS36154 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP2047UCB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.1
-3.2
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.6
-2.8
A
Pulsed Drain Current (Note 6) I
DM
16 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) P
D
1.0 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 7) R
θJA
127 °C/W
Thermal Resistance, Junction to Case @ T
C
= +25°C (Note 7) R
θJC
25.8 °C/W
Power Dissipation (Note 5) P
D
1.66 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 5) R
θJA
77 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250μA
Gate-Source Breakdown Voltage BV
GSS
-6.0 — — V V
DS
= 0V, I
G
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1 μA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — -100 nA V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.8 -1.2 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS(ON)
— — 47
mΩ
V
GS
= -4.5V, I
D
=-1A
— — 60 V
GS
= -2.5V, I
D
= -1A
Forward Transfer Admittance |Y
fs
| — 3.7 — S V
DS
= -10V, I
D
= -1A
Diode Forward Voltage V
SD
— -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
Reverse Recovery Charge Q
rr
— 3.07 — nC V
DD
= –10V, I
F
= –1A,
di/dt =100A/μs Reverse Recovery Time t
rr
— 13.14 — ns
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 218 —
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 116 —
Reverse Transfer Capacitance C
rss
— 11 —
Total Gate Charge Q
g
— 2.3 —
nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -1A
Gate-Source Charge Q
gs
— 0.2 —
Gate-Drain Charge Q
gd
— 0.4 —
Gate Charge at Vth Q
g(th)
— 0.2 —
Turn-On Delay Time t
D(on)
— 7.9 —
ns
V
DS
= -10V, V
GS
= -2.5V,
R
G
= 20Ω, I
D
= -1A
Turn-On Rise Time t
r
— 10.7 —
Turn-Off Delay Time t
D(off)
— 48 —
Turn-Off Fall Time t
f
— 38 —
Notes: 5. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.