Diodes DMP2033UCB9 - Manual (Page 4)

DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
4 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMP2033UCB9
NEW PROD
UC
T
0.2
0.4
0.6
0.8
1.2
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
5
10
15
20
0 0.3 0.6 0.9 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25 C
A
°
T = -55 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
10,000
0 2 4 6 8 10 12 14 16 18 20
1,000
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
0 1 2 3 4 5 6
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (V
)
GS
V = -10V
I = -2.0A
DS
D
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
Single Pulse
P = 10 s
W
µ