Diodes DMP2004WK - Manual (Page 2)

DMP2004WK
Document number: DS30931 Rev. 6 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMP2004WK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) I
D
-400 mA
Pulsed Drain Current I
DM
-1.4 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
d
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R
JA
500 °C/W
Operating and Storage Temperature Range T
j,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20   V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
  -1.0 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
  1.0 µA V
GS
= 4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5  -1.0 V V
DS
= V
GS
, I
D
= -250 A
Static Drain-Source On-Resistance R
DS(ON)

0.7
1.1

1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200   mS V
DS
=10V, I
D
= -0.2A
Diode Forward Voltage (Note 6) V
SD
-0.5  -1.2 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
  175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
  30 pF
Reverse Transfer Capacitance C
rss
  20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.