Diodes DMP2004TK - Manual (Page 2)

DMP2004TK
Document number: DS30932 Rev. 5 - 2
2 of 5
www.diodes.com
August 2012
© Diodes Incorporated
DMP2004TK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) Steady
State
T
A
= +25
°C
T
A
= +85
°C
I
D
-430
-310
mA
Pulsed Drain Current (Note 6) I
DM
-750 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
150 mW
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20 ⎯ ⎯ V V GS = 0V, I D = -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1.0 μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±1.0 μA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯
0.7
1.1
1.7
1.1
1.6
2.4
Ω
V
GS
= -4.5V, I
D
= -430mA
V GS = -2.5V, I D = -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200 ⎯ ⎯ ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 7) V SD
⎯ ⎯ -1.4 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯ 175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
⎯ ⎯ 30 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width
≤10μS, Duty Cycle ≤1%
7. Short duration pulse test used to minimize self-heating effect.