Dmp2004dwk, Maximum ratings, Thermal characteristics – Diodes DMP2004DWK User Manual
Page 2: Electrical characteristics
DMP2004DWK
Document number: DS30940 Rev. 6 - 2
2 of 5
January 2014
© Diodes Incorporated
DMP2004DWK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 4)
T
A
= +25
C
T
A
= +85
C
I
D
-430
-310
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 4)
P
D
250 mW
Thermal Resistance, Junction to Ambient
R
θJA
500 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
1.0
μA
V
GS
=
4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.5
-1.0 V
V
DS
= V
GS
, I
D
= -250
A
Static Drain-Source On-Resistance
R
DS (ON)
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
ms
V
DS
= 10V, I
D
= 0.2A
Diode Forward Voltage (Note 5)
V
SD
-0.5
-1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
30 pF
Reverse Transfer Capacitance
C
rss
20 pF
Notes:
4. Diodes Inc.'s "Green" policy can be found on our w
5. Short duration pulse test used to minimize self-heating effect.
0
0
-V , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
-V , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D