Dmp2004dmk new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP2004DMK User Manual
Page 2: Electrical characteristics
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
2 of 5
August 2012
© Diodes Incorporated
DMP2004DMK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 5)
I
D
-550 mA
Pulsed Drain Current
I
DM
-1.9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
250 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±1.0
μA
V
GS
=
±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5
⎯
-1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
⎯
⎯
mS
V
DS
=10V, I
D
= -0.2A
Diode Forward Voltage (Note 6)
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
30 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
20 pF
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.