Diodes DMG9933USD User Manual
Dmg9933usd new prod uc t, Features, Mechanical data
DMG9933USD
Document number: DS32085 Rev. 2 - 2
1 of 6
June 2010
© Diodes Incorporated
DMG9933USD
NEW PROD
UC
T
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.072 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current (Note 3) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
-4.6
-3
A
Pulsed Drain Current (Note 4)
I
DM
-20 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
1.15 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C
R
θJA
109 °C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
SO-8
Top View
Internal Schematic
Top View
S1
D2
S2
D1
G2
G1
D1
D2
D
2
S
2
G
2
D
1
S
1
G
1
P-Channel MOSFET
P-Channel MOSFET