Diodes DMG2301U - Manual (Page 2)

DMG2301U
Document number: DS31848 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG2301U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.7
-2.1
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.1
-1.7
A
Pulsed Drain Current (Note 6) I
DM
-27 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
0.8 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
157 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20   V V
GS
= 0V, I
D
= -250 A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
  -1.0 A V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.45  -1.0 V V
DS
= V
GS
, I
D
= -250 A
Static Drain-Source On-Resistance R
DS (ON)
 
80
mΩ
V
GS
= -4.5V, I
D
= -2.8A
110 V
GS
= -2.5V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
|  10  S V
DS
= -5V, I
D
= -2.8A
Diode Forward Voltage V
SD
 -0.75 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 608  pF
V
DS
= -6V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 82  pF
Reverse Transfer Capacitance C
rss
 72  pF
Gate Resistance R
G
 44.9  Ω V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
 6.5  nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3A Gate-Source Charge Q
gs
 0.9  nC
Gate-Drain Charge Q
gd
 1.5  nC
Turn-On Delay Time t
D(on)
 12.5 40 ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10 , R
G
= 1.0 , I
D
= -1A
Turn-On Rise Time t
r
 10.3 30 ns
Turn-Off Delay Time t
D(off)
 46.5 140 ns
Turn-Off Fall Time t
f
 22.2 66 ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature..
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.