Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG1013UW User Manual
Page 2: Dmg1013uw

DMG1013UW
Document number: DS31861 Rev. 3 - 2
2 of 6
September 2013
© Diodes Incorporated
DMG1013UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±6 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-0.82
-0.54
A
Pulsed Drain Current (Note 6)
I
DM
-6 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
0.31 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
θJA
398 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
- -
-100
nA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±2.0
μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 - -1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.5
0.7
1.0
0.75
1.05
1.5
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
- 0.9 - S
V
DS
= -10V, I
D
= -250mA
Diode Forward Voltage
V
SD
-0.8
-1.2
V
V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 59.76 - pF
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 12.07 - pF
Reverse Transfer Capacitance
C
rss
- 6.36 - pF
Total Gate Charge
Q
g
- 622.4 - pC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge
Q
gs
- 100.3 - pC
Gate-Drain Charge
Q
gd
- 132.2 - pC
Turn-On Delay Time
t
D(on)
-
5.1
- ns
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= -200mA
Turn-On Rise Time
t
r
-
8.1
- ns
Turn-Off Delay Time
t
D(off)
-
28.4
- ns
Turn-Off Fall Time
t
f
-
20.7
- ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.