Diodes DMN10H220L - Manual (Page 2)

DMN10H220L
Document number: DS36720 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN10H220L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
16 V
Continuous Drain Current (Note 5) V
GS
= 10V
(Note 6)
T
A
= +25 C
T
A
= +70 C
I
D
1.6
1.3
A
(Note 5)
T
A
= +25 C
T
A
= +70 C
I
D
1.4
1.1
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
0.6 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
94
°C/W
(Note 5) 177
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
100 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= 16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 — 2.5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
— 220
mΩ
V
GS
= 10V, I
D
= 1.6A
— 250 V
GS
= 4.5V, I
D
= 1.3A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 1.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 401 —
pF
V
DS
= 25V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
— 22 —
Reverse Transfer Capacitance C
rss
— 17 —
Gate Resistnace R
g
— 2.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 4.1 —
nC V
DS
= 50V, I
D
= 1.6A
Total Gate Charge (V
GS
= 10V) Q
g
— 8.3 —
Gate-Source Charge Q
gs
— 1.5 —
Gate-Drain Charge Q
gd
— 2 —
Turn-On Delay Time t
D(on)
— 6.8 —
ns
V
DS
= 50V, V
GS
= 4.5V,
R
G
= 6.8Ω I
D
= 1A
Turn-On Rise Time t
r
— 8.2 —
Turn-Off Delay Time t
D(off)
— 7.9 —
Turn-Off Fall Time t
f
— 3.6 —
Reverse Recovery Time t
rr
— 17 — ns
I
F
= 1.1A, di/dt =100A/μs
Reverse Recovery Charge Q
rr
— 9.8 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.