Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN10H220LE User Manual
Page 2
DMN10H220LE
Document number: DS36475 Rev. 2 - 2
2 of 6
May 2014
© Diodes Incorporated
DMN10H220LE
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Drain-Source Voltage
V
DSS
100 V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
2.3
1.8
A
T
C
= +25°C
T
C
= +70°C
I
D
6.2
4.9
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
1.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
69 °C/W
Total Power Dissipation (Note 5)
T
C
= +25°C
P
D
14 W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
8.7 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100 —
— V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
—
—
1 µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100 nA
V
GS
=
±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 —
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
—
220
mΩ
V
GS
= 10V, I
D
= 1.6A
—
—
250
V
GS
= 4.5V, I
D
= 1.3A
Diode Forward Voltage
V
SD
—
—
1.5 V
V
GS
= 0V, I
S
= 1.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
401 —
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
22 —
Reverse Transfer Capacitance
C
rss
—
17 —
Gate Resistnace
R
g
—
2.1 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
4.1 —
nC
V
DS
= 50V, I
D
= 1.6A
Total Gate Charge (V
GS
= 10V)
Q
g
—
8.3 —
Gate-Source Charge
Q
gs
—
1.5 —
Gate-Drain Charge
Q
gd
—
2 —
Turn-On Delay Time
t
D(on)
—
6.8 —
ns
V
DS
= 50V, V
GS
= 4.5V,
R
G
= 6.8
Ω, I
D
= 1.0A
Turn-On Rise Time
t
r
—
8.2 —
Turn-Off Delay Time
t
D(off)
—
7.9 —
Turn-Off Fall Time
t
f
—
3.6 —
Reverse Recovery Time
t
rr
—
17 —
ns
I
S
= 1.1A, di/dt =100A/
μs
Reverse Recovery Charge
Q
rr
—
9.8 —
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.