Diodes DMN66D0LW - Manual (Page 3)

DMN66D0LW
Document number: DS31483 Rev. 2 - 2
3 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN66D0LW
NEW PROD
UC
T
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.01
0.1
1
1 2 3 4 5
T = -55°C
A
T = 25°C
A T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, ST
A
T
IC
DRAI
N
-S
OURCE
ON-RE
S
IS
TA
N
C
E
(
)
DS
(O
N)

1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
GS
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
THRES
H
OL
D VO
LT
AG
E (V)
GS
(T
H
)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
1.0
I = 250µA
D
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
1
10
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
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