Diodes DMN66D0LT User Manual
Dmn66d0lt, Features, Mechanical data
DMN66D0LT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Small Surface Mount Package
•
ESD Protected Gate, 1KV (HBM)
•
Lead Free/RoHS Compliant (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-523
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.002 grams (approximate)
U
C
T
NEW PROD
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
SOT-523
TOP VIEW
G
S
D
ESD PROTECTED, 1KV
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage (Note 1)
Continuous
V
GSS
±20 V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation
P
D
200 mW
Thermal Resistance, Junction to Ambient
R
θJA
625 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V,
I
D
= 10
μA
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
⎯
⎯
1.0
500
µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±5
μA V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
1.2
⎯
2.0 V
V
DS
= V
GS
,
I
D
= 250
μA
V
GS
= 5.0V,
I
D
=
0.115A
Static Drain-Source On-Resistance
@ T
J
= 25°C
@ T
J
= 125°C
R
DS (ON)
⎯
3.5
3.0
6
5
Ω
V
GS
= 10V, I
D
=
0.115A
Forward Transconductance
g
FS
80
⎯
⎯
mS V
DS
= 10V,
I
D
=
0.115A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
23
⎯
pF
Output Capacitance
C
oss
⎯
3.4
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
1.4
⎯
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯
10
⎯
ns
Turn-Off Delay Time
t
D(OFF)
⎯
33
⎯
ns
V
DD
= 30V, I
D
= 0.115A,
R
L
= 150
Ω,
V
GEN
= 10V
,
R
GEN
= 25
Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
1 of 4
www.diodes.com
September 2008
© Diodes Incorporated