Diodes DMN65D8LW User Manual
Dmn65d8lw, Product summary, Description
DMN65D8LW
Document number: DS35639 Rev. 4 - 2
1 of 5
July 2012
© Diodes Incorporated
DMN65D8LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
60V
3
Ω @ V
GS
= 10V
SOT323
300mA
4
Ω @ V
GS
= 5V
260mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC
Converters
•
Power Management Functions
•
Battery Operated Systems and Solid-State Relays
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Small Surface Mount Package
•
ESD Protected Gate, 1KV (HBM)
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT323
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN65D8LW
-7
SOT323
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code Y
Z
A
B
C D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D
G
S
Top View
Pin Configuration
Equivalent Circuit
ESD PROTECTED TO 1kV
SOT323
Top View
Source
Gate
Protection
Diode
Gate
Drain
MM3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
MM3
YM