Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN65D8L User Manual
Page 2: Dmn65d8l
DMN65D8L
Document number: DS35923 Rev. 2 - 2
2 of 6
August 2012
© Diodes Incorporated
DMN65D8L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
310
240
mA
Continuous Drain Current (Note 6) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
270
210
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Maximum Body Diode Continuous Current (Note 5)
I
S
500 mA
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 6)
P
D
370
mW
(Note 5)
540
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
348
°C/W
(Note 5)
241
Thermal Resistance, Junction to Case
(Note 5)
R
θJC
91
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1.0 µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±5 µA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.2
⎯
2.0 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
2 3
Ω
V
GS
= 10V,
I
D
= 0.115A
⎯
2.5 4
Ω
V
GS
= 5V,
I
D
=
0.115A
Forward Transconductance
g
FS
80 290
⎯
mS
V
DS
= 10V,
I
D
= 0.115A
Diode Forward Voltage
V
SD
⎯
0.8
1.2
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
22.0
⎯
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
3.2
⎯
Reverse Transfer Capacitance
C
rss
⎯
2.0
⎯
Gate Resistance
R
G
⎯
79.9
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V
Q
g
⎯
0.87
⎯
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V
Q
g
⎯
0.43
⎯
Gate-Source Charge
Q
gs
⎯
0.11
⎯
Gate-Drain Charge
Q
gd
⎯
0.11
⎯
Turn-On Delay Time
t
D(on)
⎯
2.7
⎯
nS
V
DD
= 30V, I
D
= 0.115A,
V
GEN
= 10V
,
R
GEN
= 25
Ω
Turn-On Rise Time
t
r
⎯
2.8
⎯
Turn-Off Delay Time
t
D(off)
⎯
12.6
⎯
Turn-Off Fall Time
t
f
⎯
7.3
⎯
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
.