Dmn6140l new prod uc t new prod uc t, Dmn6140l – Diodes DMN6140L User Manual
Page 4
DMN6140L
Document number: DS35621 Rev. 3 - 2
4 of 6
December 2013
© Diodes Incorporated
DMN6140L
NEW PROD
UC
T
NEW PROD
UC
T
0
0.06
0.12
0.18
0.24
0.3
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 2.5A
GS
D
V
=
V
I = 5.0A
GS
D
10
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
-50
-25
0
25
50
75
100 125 150
V
, G
A
TE THRE
SHO
LD
VO
LT
AG
E
(V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
10
100
1000
0
5
10
15
20
25
30
35
40
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
f=1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
g
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 30V
I =
A
DS
D
1.8
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
DUT on 1*MRP board
GS
I
, DRAIN CUR
RENT
(
A
)
D