Diodes DMN6075S User Manual
Summary, Description, Applications
DMN6075S
Document number: DS37023 Rev. 2 - 2
1 of 6
April 2014
© Diodes Incorporated
DMN6075S
ADVAN
CE I
N
F
O
RM
ATI
O
N
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
85 mΩ @ V
GS
= 10V
2.5A
120 mΩ @ V
GS
= 4.5V
2.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power Management Functions
Backlighting
Features and Benefits
N
MOSFET
Low
On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Product
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN6075S-7 7
8
3,000
DMN6075S-13 13
8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B C D E F G H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
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Pin Configuration
S67 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
D
G
S
D
S
G
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