Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN6069SE User Manual
Page 2

DMN6069SE
D
atasheet number: DS36474 Rev. 2 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN6069SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.3
A
T
C
= +25°C
T
C
= +70°C
I
D
10
8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
25 A
Maximum Body Diode Continuous Current
I
S
3.2 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.2
W
T
A
= +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
58 °C/W
Total Power Dissipation (Note 5)
P
D
11 W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
8.9 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1
3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
47 69
mΩ
V
GS
= 10V, I
D
= 3A
54 100
V
GS
= 4.5V, I
D
= 2.4A
Diode Forward Voltage
V
SD
0.8 1.1 V
V
GS
= 0V, I
S
= 2.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
825
pF
V
DS
= 30V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
40
Reverse Transfer Capacitance
C
rss
29
Gate Resistance
R
G
2.3
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
7.2
nC
V
DS
= 30V, I
D
= 12A
Total Gate Charge (V
GS
= 10V)
Q
g
16
Gate-Source Charge
Q
gs
3.2
Gate-Drain Charge
Q
gd
2.8
Turn-On Delay Time
t
D(on)
3.8
nS
V
DD
= 30V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 12A
Turn-On Rise Time
t
r
6.7
Turn-Off Delay Time
t
D(off)
16
Turn-Off Fall Time
t
f
5.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.