Maximum ratings, Thermal characteristics, Electrical characteristics n-channel – Diodes DMN6070SFCL User Manual
Page 2
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
2 of 5
March 2014
© Diodes Incorporated
DMN6070SFCL
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.0
2.5
A
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
I
DM
10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.6 W
(Note 6)
1.8
W
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
200
°C/W
(Note 6)
67
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 —
— V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
1.0 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100 nA
V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 —
3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
67
85
mΩ
V
GS
= 10V, I
D
= 1.5A
74 120
V
GS
= 4V, I
D
= 0.5A
Forward Transfer Admittance
|Y
fs
|
—
2.6 — S
V
DS
= 5V, I
D
= 1.5A
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= 3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
606
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
32.6 —
pF
Reverse Transfer Capacitance
C
rss
—
24.6
—
pF
Gate Resistance
R
g
—
1.5
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
=10V)
Q
g
—
12.3 —
nC
V
DS
= 30V, I
D
= 3A
Total Gate Charge (V
GS
=4.5V)
Q
g
—
5.6
—
nC
Gate-Source Charge
Q
gs
—
1.7
—
nC
Gate-Drain Charge
Q
gd
—
1.9 —
nC
Turn-On Delay Time
t
D(on)
—
3.5
—
ns
V
GS
= 10V, V
DS
= 30V,
R
G
= 20Ω, R
L
= 50Ω
Turn-On Rise Time
t
r
—
4.1
—
ns
Turn-Off Delay Time
t
D(off)
—
35 —
ns
Turn-Off Fall Time
t
f
—
11
—
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.